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AP60L02GJ Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP60L02GJ Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
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2 / 6 page  Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 25 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.037 -V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=25A - - 12 mΩ VGS=4.5V, ID=20A - - 26 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=25A - 30 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=150 oC) VDS=20V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 2 ID=25A - 21 nC Qgs Gate-Source Charge VDS=20V - 2.8 nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 16 nC td(on) Turn-on Delay Time 2 VDS=15V - 8 - ns tr Rise Time ID=20A - 75 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns tf Fall Time RD=0.75Ω -20 - ns Ciss Input Capacitance VGS=0V - 605 - pF Coss Output Capacitance VDS=25V - 415 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 195 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.26V - - 50 A ISM Pulsed Source Current ( Body Diode ) 1 - - 180 A VSD Forward On Voltage 2 Tj=25℃, IS=50A, VGS=0V - - 1.26 V Drain-Source Avalanche Ratings Symbol Parameter Test Conditions Min. Typ. Max. Units EAS Single Pulse Avalanche Energy 2 VDD=25V, ID=35A, L=100uH - - 61 mJ IAR Avalanche Current VGS=10V - - 35 A Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP60L02GH/J ±100 ± 20V ± 20V |
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