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AP4411GM Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP4411GM Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
3 / 4 page AP4411GM Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0 20 40 60 80 100 120 02 46 8 10 -V DS , Drain-to-Source Voltage (V) T A =25 o C V G =-4.0V -10V -8.0V -6.0V -4.5V 10 30 50 70 90 3579 11 -V GS , Gate-to-Source Voltage (V) I D =-8.0A T A =25 ℃ ℃ ℃ ℃ 0.60 0.80 1.00 1.20 1.40 1.60 1.80 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =-8.0A V G =-10V 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 T j , Junction Temperature ( o C) 0 20 40 60 80 100 02 46 8 -V DS , Drain-to-Source Voltage (V) T A =150 o C V G =-4.0V -4.5V -6.0V -8.0V -10V 0 1 2 3 4 5 6 7 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C |
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