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AP4426GM Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP4426GM Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
3 / 4 page AP4426GM Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 3 5 10 15 20 24 68 10 V GS , Gate-to-Source Voltage (V) I D =12 A T A =25 ℃ 0 20 40 60 80 100 02 46 V DS , Drain-to-Source Voltage (V) T A =25 o C 10V 7.0V 5.0V 4.5V V G =3.0V 0 20 40 60 80 100 0246 V DS , Drain-to-Source Voltage (V) T A = 150 o C 10V 7.0V 5.0V 4.5V V G =3.0V 0.4 0.9 1.4 1.9 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =16 A V G =10V 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) 0 3 6 9 12 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C |
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