AP4501AGM datasheet(2/7 Pages) A-POWER

Part #	AP4501AGM

Description	Simple Drive Requirement, Fast Switching Performance

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Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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N-CH Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

30

-

V

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=10V, ID=7A

-

28

mΩ

VGS=4.5V, ID=5A

-

42

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

1

-

3

V

gfs

Forward Transconductance

VDS=10V, ID=6A

-

6

-

S

IDSS

Drain-Source Leakage Current

VDS=30V, VGS=0V

-

1

uA

Drain-Source Leakage Current (Tj=70

oC) V

DS=24V ,VGS=0V

-

25

uA

IGSS

Gate-Source Leakage

VGS=+20V, VDS=0V

-

+100

nA

Qg

Total Gate Charge

2

ID=6A

-

8.4

13.5

nC

Qgs

Gate-Source Charge

VDS=24V

-

1.4

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

-

4.7

-

nC

td(on)

Turn-on Delay Time

2

VDS=20V

-

5

-

ns

tr

Rise Time

ID=1A

-

8

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω,VGS=10V

-

18.5

-

ns

tf

Fall Time

RD=20Ω

-9

-

ns

Ciss

Input Capacitance

VGS=0V

-

485

770

pF

Coss

Output Capacitance

VDS=25V

-

80

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

75

-

pF

Rg

Gate Resistance

f=1.0MHz

-

1.8

3

Ω

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

VSD

Forward On Voltage

2

IS=7A, VGS=0V

-

1.2

V

trr

Reverse Recovery Time

IS=6A, VGS=0V,

-

19

-

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

-

11

-

nC

2

AP4501AGM

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