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AP9567GM Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP9567GM Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 4 page Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.03 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V, ID=-6A - - 50 mΩ VGS=-4.5V, ID=-4A - - 80 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-6A - 9 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-40V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=-32V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=±25V - - nA Qg Total Gate Charge 2 ID=-6A - 11 18 nC Qgs Gate-Source Charge VDS=-32V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC td(on) Turn-on Delay Time 2 VDS=-20V - 10 - ns tr Rise Time ID=-1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 30 - ns tf Fall Time RD=20Ω -6 - ns Ciss Input Capacitance VGS=0V - 880 1400 pF Coss Output Capacitance VDS=-25V - 135 pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Rg Gate Resistance f=1.0MHz - 5 8 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=-2A, VGS=0V - - -1.2 V t rr Reverse Recovery Time 2 IS=-6A, VGS=0V, - 24 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 21 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad. AP9567GM ±100 |
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