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AP50T03GH,J Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP50T03GH,J Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page AP50T03GH/J Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 Q VG 4.5V QGS QGD QG Charge 0 2 4 6 8 10 010 20 30 Q G , Total Gate Charge (nC) V DS =15V V DS =20V V DS =24V I D =25 A 100 1000 1 5 9 1317 2125 29 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 20 40 60 02 46 8 10 V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =5V 1 10 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON) |
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