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AP1333GU Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP1333GU Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page AP1333GU Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 td(on) tr td(off)tf VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0 2 4 6 8 10 01 23 4 Q G , Total Gate Charge (nC) I D = -0.5A V DS = -16V 10 100 13579 11 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 1 10 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC Operation in this area limited by RDS(ON) |
Similar Part No. - AP1333GU_11 |
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Similar Description - AP1333GU_11 |
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