LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

-25

V

Collector-Base Voltage

-40

V

Emitter-Base Voltage

Collector Current

C

-1500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

225

mW

Derate above 25°C

1.8

mW/°C

Thermal Resistance,Junction to Ambient

R

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA=25°C

300

mW

Derate above 25°C

2.4

mW/°C

Thermal Resistance,Junction to Ambient

R

417

°C/W

Junction and Storage Temperature

-55 to +150

°C

1

3

2

SOT–23

PNP Silicon

FEATURE

High current capacity in compact package.

Epitaxial planar type.

PN

P complement: L8550H

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

L8550HPLT1G

1HB

L8550HPLT3G

1HB

L8550HQLT1G

1HD

L8550HQLT3G

1HD

10000/Tape&Reel

Shipping

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

1

BASE

2

EMITTER

COLLECTOR

3

L8550HRLT1G

1HF

L8550HRLT3G

1HF

1HH

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

L8550HSLT1G

L8550HSLT3G

1HH

We declare that the material of product compliance with RoHS requirements.

L8550HPLT1G

Series

I

-5

V

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.A 1/3