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BSS84 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part # BSS84
Description  P-Channel Enhancement Mode Field Effect Transistor
Download  5 Pages
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

BSS84 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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BSS84 Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = –250
µA
–50
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = –250
µA,Referenced to 25°C
–48
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –50 V,
VGS = 0 V
–15
µA
VDS = –50 V,VGS = 0 V TJ = 125
°C
–60
µA
IGSS
Gate–Body Leakage.
VGS =
±20 V, V
DS = 0 V
±10
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = –1 mA
–0.8
–1.7
–2
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = –1 mA,Referenced to 25
°C
3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –5 V,
ID = –0.10 A
VGS = –5 V,ID = –0.10 A,TJ=125
°C
1.2
1.9
10
17
ID(on)
On–State Drain Current
VGS = –5 V,
VDS = – 10 V
–0.6
A
gFS
Forward Transconductance
VDS = –25V,
ID = – 0.10 A
0.05
0.6
S
Dynamic Characteristics
Ciss
Input Capacitance
73
pF
Coss
Output Capacitance
10
pF
Crss
Reverse Transfer Capacitance
VDS = –25 V,
V GS = 0 V,
f = 1.0 MHz
5
pF
RG
Gate Resistance
VGS = –15 mV, f = 1.0 MHz
9
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
2.5
5
ns
tr
Turn–On Rise Time
6.3
13
ns
td(off)
Turn–Off Delay Time
10
20
ns
tf
Turn–Off Fall Time
VDD = –30 V,
ID = – 0.27A,
VGS = –10 V,
RGEN = 6
4.8
9.6
ns
Qg
Total Gate Charge
0.9
1.3
nC
Qgs
Gate–Source Charge
0.2
nC
Qgd
Gate–Drain Charge
VDS = –25 V,
ID = –0.10 A,
VGS = –5 V
0.3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.13
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.26 A(Note 2)
–0.8
–1.2
V
trr
Diode Reverse Recovery Time
10
nS
Qrr
Diode Reverse Recovery Charge
IF = –0.10A
diF/dt = 100 A/µs
(Note 2)
3
nC
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%


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