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AP9566GM Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9566GM Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS -40V ▼ Lower Gate Charge RDS(ON) 72mΩ ▼ Fast Switching Characteristic ID -4.5A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 50 ℃ /W Data and specifications subject to change without notice RoHS-compliat Product Thermal Data Parameter Total Power Dissipation 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Storage Temperature Range Continuous Drain Current 3 -3.6 Pulsed Drain Current 1 -20 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 200806201 1 AP9566GM Rating -40 +20 -4.5 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S S S G D D D D SO-8 G D S |
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