LBC856BLT1G datasheet(1/7 Pages) LRC

Part #	LBC856BLT1G

Description	General Purpose Transistors PNP Silicon

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

1

SOT–23

2

EMITTER

3

COLLECT OR

1

BASE

3

xx

MARKING DIAGRAM

xx= Device Marking

(See Table Below)

LBC857CLT1G

Series

PNP Silicon

• Moisture Sensitivity Level: 1

• ESD Rating – Human Body Model: >4000 V

ESD Rating – Machine Model: >400 V

•

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

LBC856

LBC857

LBC858, LBC859

VCEO

–65

–45

–30

V

Collector-Base Voltage

LBC856

LBC857

LBC858, LBC859

VCBO

–80

–50

–30

V

Emitter–Base Voltage

VEBO

–5.0

V

Collector Current – Continuous

IC

–100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board,

(Note 1.) TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation Alumina

Substrate, (Note 2.) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ,Tstg

–55 to

+150

°C

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

RoHS requirements.

We declare that the material of product compliance with

2

3

1

2

Rev.O 1/7

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