LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

BC856

BC857

BC858

Unit

Collector–Emitter Voltage

–65

–45

–30

V

Collector–Base Voltage

–80

–50

–30

V

Emitter–Base Voltage

–5.0

–5.0

–5.0

V

Collector Current — Continuous

–100

–100

–100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

150

mW

Thermal Resistance, Junction to Ambient

833

°C/W

Junction and Storage Temperature

–55 to +150

°C

DEVICE MARKING

LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F;

LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

– 65

—

—

– 45

—

—

v

– 30

—

—

Collector–Emitter Breakdown Voltage

– 80

—

—

– 50

—

—

v

– 30

—

—

Collector–Base Breakdown Voltage

– 80

—

—

– 50

—

—

v

– 30

—

—

Emitter–Base Breakdown Voltage

– 5.0

—

—

– 5.0

—

—

v

– 5.0

—

—

—

—

– 15

nA

—

—

– 4.0

µA

1.FR–5=1.0 x 0.75 x 0.062in

These transistors are designed for general purpose

amplifier applications. They are housed in the SOT–323/

SC–70 which is designed for low power surface mount

applications.

1

3

2

LBC856AWT1G, BWT1G

LBC857AWT1G, BWT1G

LBC858AWT1G, BWT1G

CWT1G

2

EMITTER

3

COLLECTOR

1

BASE

LBC856 Series

LBC857 Series

LBC858 Series

LBC856 Series

LBC857B Only

LBC858 Series

LBC856 Series

LBC857 Series

LBC858 Series

LBC856 Series

LBC857 Series

LBC858 Series

SOT– 323 / SC-70

Features

RoHS requirements.

We declare that the material of product compliance with

CWT1G

LBC857CWT1G= 3G;

Rev.O 1/6