LMBT6520LT1G_11 datasheet(2/6 Pages) LRC

Part #	LMBT6520LT1G

Description	High Voltage Transistor PNP Silicon RoHS requirements.

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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2 / 6 page

LESHAN RADIO COMPANY, LTD.

LMBT6520LT1G

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

hFE

—

(I C = –1.0 mAdc, V CE = –10 Vdc)

20

—

(I C = –10mAdc, V CE = –10 Vdc)

30

—

(I C = –30 mAdc, V CE = –10 Vdc)

30

200

(I C = –50 mAdc, V CE = –10 Vdc)

20

200

(I C = –100 mAdc, V CE = –10 Vdc)

15

—

Collector–Emitter Saturation Voltage

VCE(sat)

Vdc

(I C = –10mAdc, I B = –1.0mAdc)

—

–0.30

(I C = –20 mAdc, I B = –2.0 mAdc)

—

–0.35

(I C = –30 mAdc, I B = –3.0mAdc)

—

–0.50

(I C = –50 mAdc, I B = –5.0 mAdc)

—

–1.0

Base – Emitter Saturation Voltage

VBE(sat)

Vdc

(I C = –10mAdc, I B = –1.0mAdc,)

—

–0.75

(I C = –20mAdc, I B = –2.0mAdc,)

—

–0.85

(I C = –30mAdc, I B = –3.0mAdc,)

—

–0.90

Base–Emitter On Voltage

V BE(on)

—

–2.0

Vdc

(I C = –100mAdc, V CE = –10V )

SMALL–SIGNAL CHARACTERISTICS

Current Gain–Bandwidth Product

f

T

40

200

MHz

(V CE = –20 V, I C = –10mA, f = 20 MHz)

Collector –Base Capacitance

(V CB = –20 V, f = 1.0 MHz)

C cb

—

6.0

pF

Emitter –Base Capacitance

C eb

—

100

pF

(V EB= –0.5 V, f = 1.0 MHz)

Rev.O 2/6

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