LMBTA55LT1G datasheet(1/3 Pages) LRC

Part #	LMBTA55LT1G

Description	Driver Transistors PNP Silicon RoHS requirements.

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

1

3

2

LMBTA55LT1G

LMBTA56LT1G

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Driver Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

LMBTA55

LMBTA56

Unit

Collector–Emitter Voltage

V CEO

–60

–80

Vdc

Collector–Base Voltage

V CBO

–60

–80

Vdc

Emitter–Base Voltage

V EBO

–4.0

Vdc

Collector Current — Continuous

I C

–500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

P D

225

mW

TA = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

556

°C/W

Total Device Dissipation

P D

300

mW

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

417

°C/W

Junction and Storage Temperature

T J , T stg

–55 to +150

°C

DEVICE MARKING

LMBTA55LT1G = 2H; LMB TA56 LT1G = 2GM

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3)

V (BR)CEO

Vdc

(I C = –1.0 mAdc, I B= 0 )

LMBTA55

–60

—

LMBTA56

–80

—

Emitter–Base Breakdown Voltage

V (BR)EBO

–4.0

—

Vdc

(I E = –100

µAdc, I

C = 0 )

Collector Cutoff Current

I CES

—

–0.1

µAdc

( V CE = –60Vdc, I B = 0)

Collector Cutoff Current

I

CBO

µAdc

( V CB = –60Vdc, I E= 0)

LMBTA55

—

–0.1

( V CB = –80Vdc, I E= 0)

LMBTA56

—

–0.1

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width <300

µs, Duty Cycle <2.0%.

2

EMITTER

3

COLLECTOR

1

BASE

Value

We declare that the material of product

compliance with RoHS requirements.

Rev.O 1/3

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