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LMDL301T1G Datasheet(PDF) 1 Page - Leshan Radio Company |
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LMDL301T1G Datasheet(HTML) 1 Page - Leshan Radio Company |
1 / 3 page LESHAN RADIO COMPANY, LTD. PLASTIC SOD– 323 CASE 477 1 2 LMDL301T1G Silicon Hot–Carrier Diodes Schottky Barrier Diode These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are available in a Surface Mount package. • Extremely Low Minority Carrier Lifetime – 15 ps (Typ) • Very Low Capacitance – 1.5 pF (Max) @ V R = 15 V • Low Reverse Leakage – I R = 13 nAdc (Typ) • Device Marking: 4T 2 ANODE 1 CATHODE MAXIMUM RATINGS ( T J =125°C unless otherwise noted ) Symbol Rating Value Unit V R Reverse Voltage 30 Volts THERMAL CHARACTERISTICS Symbol Characteristic M a x Unit P D Total Device Dissipation FR–5 Board,* 200 mW T A = 25°C Derate above 25°C 1.57 mW/°C R θJA Thermal Resistance Junction to Ambient 635 °C/W T J , T stg Junction and Storage –55 to+150 °C Temperature Range *FR–5 Minimum Pad ORDERING INFORMATION Device Marking Shipping LMDL301T1G 4T 3000 / Tape & Reel 30 VOLTS SILICON HOT–CARRIER DETECTOR AND SWITCHING DIODES ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Typ M a x Unit Reverse Breakdown Voltage V (BR)R 30 — — Volts (I R = 10 µA) Diode Capacitance (V R = 15 V, f = 1.0MHz) Figure 1 C T — 0.9 1.5 pF Reverse Leakage (V R = 25 V) Figure 3 I R — 13 200 nAdc Forward Voltage (I F = 1.0 mAdc) Figure 4 V F — 0.38 0.45 Vdc Forward Voltage (I F = 10 mAdc) Figure 4 V F — 0.52 0.6 Vdc • LMDL301T3G 4T 10000 / Tape & Reel We declare that the material of product compliance with RoHS requirements. Rev.O 1/3 |
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