Symbol

Min

Typ

Max

Units

-30

V

-1

-5

±100

nA

-1

-1.85

-3

V

-30

A

46

68

72

m

Ω

11

S

-0.78

-1

V

-3.5

A

668

830

pF

126

pF

92

pF

69

Ω

12.7

16

nC

6.4

nC

2nC

4nC

7.7

ns

6.8

ns

20

ns

10

ns

22

30

ns

15

nC

DYNAMIC PARAMETERS

Maximum Body-Diode Continuous Current

Gate resistance

Input Capacitance

Output Capacitance

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Turn-On DelayTime

SWITCHING PARAMETERS

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

Total Gate Charge (10V)

m

Ω

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

µA

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Drain-Source Breakdown Voltage

On state drain current

Reverse Transfer Capacitance

any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

D. The static characteristics in Figures 1 to 6 are obtained using < 300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

provides a single pulse rating.

LESHAN RADIO COMPANY, LTD.

Rev .O 2/4