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AP75N07GW Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

Part # AP75N07GW
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP75N07GW Datasheet(HTML) 4 Page - Advanced Power Electronics Corp.

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Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP75N07GW
Q
VG
4.5V
QGS
QGD
QG
Charge
100
1000
10000
1
5
9
131721
2529
V DS ,Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0
40
80
120
160
02
46
V GS , Gate-to-Source Voltage (V)
T j =25
o C
V DS =5V
0
2
4
6
8
10
12
14
0
40
80
120
160
200
Q G , Total Gate Charge (nC)
V DS = 40V
V DS =48 V
V DS =60 V
I D = 40A
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
DUTY=0.5
SINGLE PULSE
0.2
T j =150
o C


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