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AP85T08GS,P Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP85T08GS,P Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page AP85T08GS/P Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1317 2125 29 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 1 10 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0 40 80 120 02 46 8 V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =5V 0 2 4 6 8 10 0 2040 6080 100 Q G , Total Gate Charge (nC) V DS = 40V V DS =50 V V DS =64 V I D =45 A Operation in this area limited by RDS(ON) |
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