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AP02N60H-H Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP02N60H-H Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 6 page Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 700 Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 AP02N60H/J-H td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 10 100 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 4 8 12 16 0 4 8 12 16 20 Q G , Total Gate Charge (nC) I D =1.4A V DS =320V V DS =400V V DS =480V 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 1 10 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC |
Similar Part No. - AP02N60H-H |
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