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AP30N30WI Datasheet(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP30N30WI Datasheet(HTML) 2 Page - Advanced Power Electronics Corp. |
2 / 4 page Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=10mA 250 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=10mA - 0.24 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=15A - - 68 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=1mA 1.5 - 3.5 V gfs Forward Transconductance VDS=10V, ID=15A - 23 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=250V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=125 oC) VDS=250V ,VGS=0V - - 200 uA IGSS Gate-Source Leakage VGS= ±30V - - ±1 uA Qg Total Gate Charge 2 ID=15A - 63 100 nC Qgs Gate-Source Charge VDS=200V - 19 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 14 - nC td(on) Turn-on Delay Time 2 VDS=125V - 28 - ns tr Rise Time ID=15A - 36 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 84 - ns tf Fall Time RD=8.3Ω -45 - ns Ciss Input Capacitance VGS=0V - 4290 6900 pF Coss Output Capacitance VDS=25V - 550 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Rg Gate Resistance f=1.0MHz - 1.9 3 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=30A, VGS=0V - - 1.5 V trr Reverse Recovery Time 2 IS=15A, VGS=0V - 235 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 2.24 - µC Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 3.Starting Tj=25 oC , V DD=50V , L=1mH , RG=25Ω , IAS=30A. 2/4 AP30N30WI |
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