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AP9965GEH Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

Part # AP9965GEH
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9965GEH Datasheet(HTML) 4 Page - Advanced Power Electronics Corp.

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Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9965GEH/J
0
1
10
100
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
4
8
12
16
0
4
8
12
16
20
Q G , Total Gate Charge (nC)
I D =18A
V DS =20V
V DS =25V
V DS =30V
10
100
1000
1
5
9
1317
2125
29
V DS ,Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
Q
VG
4.5V
QGS
QGD
QG
Charge
0
10
20
30
40
0246
V GS , Gate-to-Source Voltage (V)
T j =150
o C
T j =25
o C
V DS =5V


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