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AP9972AGP Datasheet(PDF) 4 Page - Advanced Power Electronics Corp.

Part # AP9972AGP
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9972AGP Datasheet(HTML) 4 Page - Advanced Power Electronics Corp.

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Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9972AGP
Q
VG
10V
QGS
QGD
QG
Charge
100
1000
10000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
12
14
0
204060
Q G , Total Gate Charge (nC)
V DS =32 V
V DS =40 V
V DS =48 V
I D =40 A
0
20
40
60
80
024
68
10
V GS , Gate-to-Source Voltage (V)
T j =150
o C
T j =25
o C
V DS =5V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC


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