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AP9973GM Datasheet(PDF) 1 Page - Advanced Power Electronics Corp.

Part # AP9973GM
Description  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9973GM Datasheet(HTML) 1 Page - Advanced Power Electronics Corp.

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Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
80mΩ
▼ Surface Mount Package
ID
3.9A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Continuous Drain Current
3, V
GS @ 10V
2.5
Pulsed Drain Current
1,2
20
Gate-Source Voltage
Continuous Drain Current
3, V
GS @ 10V
3.9
Parameter
Rating
Drain-Source Voltage
60
200422051-1/4
AP9973GM
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
±20
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1


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