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AP9973GM Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP9973GM Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Low Gate Charge BVDSS 60V ▼ Single Drive Requirement RDS(ON) 80mΩ ▼ Surface Mount Package ID 3.9A ▼ RoHS Compliant Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 62.5 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 2 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.016 Continuous Drain Current 3, V GS @ 10V 2.5 Pulsed Drain Current 1,2 20 Gate-Source Voltage Continuous Drain Current 3, V GS @ 10V 3.9 Parameter Rating Drain-Source Voltage 60 200422051-1/4 AP9973GM Pb Free Plating Product The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. ±20 S1 G1 S2 G2 D1 D1 D2 D2 SO-8 G2 D2 S2 G1 D1 S1 |
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