Advanced Power

N-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ 100% Avalanche Test

600V

▼ Fast Switching Characteristic

10Ω

▼ Simple Drive Requirement

0.35A

Description

Absolute Maximum Ratings

Symbol

Units

Drain-Source Voltage

V

Gate-Source Voltage

V

4

A

Pulsed Drain Current

1

A

Total Power Dissipation

W

Single Pulse Avalanche Energy

2

mJ

Avalanche Current

A

℃

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient

4

45

℃/W

Data & specifications subject to change without notice

Parameter

APA2N70K

RoHS-compliant Product

Rating

0.5

600

201201163

1.4

2.7

+30

0.35

-55 to 150

Parameter

1

1

Storage Temperature Range

-55 to 150

G

D

S

D

D

S

G

SOT-223

Advanced Power MOSFETs from APEC provide the designer with the best

combination of fast switching,low on-resistance and cost-effectiveness.

The SOT-223 package is designed for suface mount application, larger

heatsink than SO-8 package.