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APA2N70K Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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APA2N70K Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 6 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 600V ▼ Fast Switching Characteristic RDS(ON) 10Ω ▼ Simple Drive Requirement ID 0.35A Description Absolute Maximum Ratings Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TA=25℃ Continuous Drain Current, VGS @ 10V 4 A IDM Pulsed Drain Current 1 A PD@TA=25℃ Total Power Dissipation W EAS Single Pulse Avalanche Energy 2 mJ IAR Avalanche Current A TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 4 45 ℃/W Data & specifications subject to change without notice Parameter APA2N70K RoHS-compliant Product Rating 0.5 600 201201163 1.4 2.7 +30 0.35 -55 to 150 Parameter 1 1 Storage Temperature Range -55 to 150 G D S D D S G SOT-223 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 package. |
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