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AP20GT60W Datasheet(PDF) 2 Page - Advanced Power Electronics Corp.

Part # AP20GT60W
Description  N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP20GT60W Datasheet(HTML) 2 Page - Advanced Power Electronics Corp.

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Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Saturation Voltage
Fig 4. Typical Collector- Emitter Voltage
Characteristics
v.s. Junction Temperature
--
Fig 5. Gate Threshold Voltage
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
AP20GT60W
0
40
80
120
160
200
0
4
8
12
16
20
V CE , Collector-Emitter Voltage (V)
20V
18V
15V
12V
V GE =10V
T C =25
o C
1
2
3
4
0
40
80
120
160
Junction Temperature (
o C)
I C =40 A
I C =20A
V GE =15 V
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
Junction Temperature (
o C )
0
40
80
120
160
200
02
46
8
V CE , Collector-Emitter Voltage (V)
V GE =15V
T C =25 ℃
0
1000
2000
3000
4000
5000
1
5
9
13
172125
2933
V CE , Collector-Emitter Voltage (V)
f=1.0MHz
C ies
C oes
C res
T C =150 ℃
0
40
80
120
160
200
04
8
12
16
20
V CE , Collector-Emitter Voltage (V)
20V
18V
15V
12V
V GE =10V
T C =150
o C


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