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AP30G40GEO-HF Datasheet(PDF) 3 Page - Advanced Power Electronics Corp.

Part # AP30G40GEO-HF
Description  N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP30G40GEO-HF Datasheet(HTML) 3 Page - Advanced Power Electronics Corp.

  AP30G40GEO-HF Datasheet HTML 1Page - Advanced Power Electronics Corp. AP30G40GEO-HF Datasheet HTML 2Page - Advanced Power Electronics Corp. AP30G40GEO-HF Datasheet HTML 3Page - Advanced Power Electronics Corp.  
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AP30G40GEO-HF
Fig 7. Typical Capacitance Characterisitics
Fig 8. Maximum Pulse Collector Current
Fig 9. Switching Time Test Circuit
Fig 10. Switching Time Waveform
Fig 11. Gate Charge Test Circuit
Fig 12. Gate Charge Waveform
3
td(on) tr
td(off) tf
VCE
VGE
10%
90%
TO THE
OSCILLOSCOPE
-
+
4V
C
G
E
VCE
VGE
RG
RC
VCC=320 V
10
100
1000
10000
1
5
9
1317
212529
3337
V CE , Collector-Emitter Voltage (V))
f=1.0MHz
C ies
C oes
C res
0
1
2
3
4
5
6
0
2040
6080
100
Q G , Gate Charge (nC)
I CP =40A
V CE =200V
0
40
80
120
160
02
46
8
V GE , Gate-to-Emitter Voltage (V)
T C =70
o C
VCC=200V
TO THE
OSCILLOSCOPE
-
+
C
G
VCE
VGE
IC
IG
1~3mA
E


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