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AM2336N Datasheet(PDF) 1 Page - Analog Power |
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AM2336N Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM2336N N-Channel 30-V (D-S) MOSFET VDS (V) ID(A) 5.3 3.7 Symbol Limit Units VDS 30 VGS ±12 TA=25°C 5.3 TA=70°C 4.1 IDM 30 IS 1.9 A TA=25°C 1.3 TA=70°C 0.8 TJ, Tstg -55 to 150 °C Symbol Maximum Units 100 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Continuous Drain Current a PRODUCT SUMMARY 30 rDS(on) (mΩ) 32 @ VGS = 4.5V 64 @ VGS = 2.5V Gate-Source Voltage Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM2336N_1A |
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