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AM2337P Datasheet(PDF) 1 Page - Analog Power |
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AM2337P Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM2337P P-Channel 30-V (D-S) MOSFET VDS (V) ID(A) -2.8 -2.3 Symbol Limit Units VDS -30 VGS ±8 TA=25°C -2.8 TA=70°C -2.2 IDM -10 IS -1.7 A TA=25°C 1.3 TA=70°C 0.8 TJ, Tstg -55 to 150 °C Symbol Maximum Units 100 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Continuous Drain Current a PRODUCT SUMMARY -30 rDS(on) (mΩ) 112 @ VGS = -4.5V 172 @ VGS = -2.5V Gate-Source Voltage Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM2337P_1A |
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