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SD2931-11 Datasheet(PDF) 1 Page - STMicroelectronics |
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SD2931-11 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 18 page March 2010 Doc ID 17329 Rev 1 1/18 18 SD2931-11 RF power transistors HF/VHF/UHF N-channel MOSFETs Features ■ Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures ■ GFS and VGS sort marked on unit Description The SD2931-11 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz. The SD2931-11 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25% lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors. Figure 1. Pin connection M174 epoxy sealed 1. Drain 2. Source 3. Gate 4. Source 1 3 4 2 Table 1. Device summary Order code Marking Package Packing SD2931-11 SD2931-11 M174 epoxy sealed Tray www.st.com |
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