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AP2111MP-2.5G1 Datasheet(PDF) 9 Page - BCD Semiconductor Manufacturing Limited |
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AP2111MP-2.5G1 Datasheet(HTML) 9 Page - BCD Semiconductor Manufacturing Limited |
9 / 22 page Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 May 2012 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 9 Electrical Characteristics (Continued) AP2111-3.3 Electrical Characteristic (Note 2) VIN=4.3V, CIN=1μF (Ceramic), COUT=1μF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges, unless otherwise specified (Note 3). Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Parameter Symbol Conditions Min Typ Max Unit Output Voltage VOUT VIN =4.3V, 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 3.3 VOUT ×101.5% V Maximum Output Current IOUT(Max) VIN=4.3V, VOUT=3.251V to 3.350V 600 mA Load Regulation (V △ OUT/VOUT) △ IOUT VIN=4.3V, 1mA ≤ IOUT ≤600mA 0.2 %/A Line Regulation (V △ OUT/VOUT) △ VIN 4.3V≤VIN≤6V, IOUT=30mA 0.02 %/V Dropout Voltage VDROP IOUT =10mA 5 8 mV IOUT =300mA 125 200 IOUT=600mA 250 400 Quiescent Current IQ VIN=4.3V, IOUT=0mA 55 80 μA Standby Current ISTD VIN=4.3V, VEN in OFF mode 0.01 1.0 μA Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=4.3V, IOUT=100mA f=100Hz 65 dB f=1kHz 65 Output Voltage Temperature Coefficient (V △ OUT/VOUT) T △ IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 μVRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 V VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time tS No Load 20 μs EN Pull Down Resistor RPD 3.0 m Ω VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω Thermal Shutdown Temperature TOTSD 160 °C Thermal Shutdown Hysteresis THYOTSD 30 Thermal Resistance (Junction to Case) θJC SOIC-8 74.6 °C /W PSOP-8 43.7 SOT-223 50.9 |
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