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VO221AT Datasheet(PDF) 1 Page - Vishay Siliconix

Part # VO221AT
Description  Optocoupler, Photodarlington Output, Low Input Current, High Gain, with Base Connection
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VO221AT Datasheet(HTML) 1 Page - Vishay Siliconix

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VO221AT, VO222AT, VO223AT
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 22-Nov-12
1
Document Number: 81954
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Photodarlington Output, Low Input Current,
High Gain, with Base Connection
DESCRIPTION
The VO221AT, VO222AT, VO223AT are high current transfer
ratio (CTR) optocouplers with a gallium arsenide infrared
LED emitter and a silicon NPN photodarlington transistor
detector.
The device has a CTR tested at 1 mA LED current. This low
drive current permits easy interfacing from CMOS to LSTTL
or TTL.
FEATURES
• Isolation test voltage, 4000 VRMS
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5 (VDE 0884-5) approved, contact
customer service if this option is required
i179022-2
A
C
NC
NC
NC
B
C
E
1
2
3
4
8
7
6
5
C
i179074
ORDERING INFORMATION
VO
2
2
#
A
T
PART NUMBER
AGENCY CERTIFIED/PACKAGE
CTR (%)
UL, cUL
≥ 100
≥ 200
≥ 500
SOIC-8
VO221AT
VO222AT
VO223AT
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Peak reverse voltage
VR
6V
Peak forward current
1 μs, 300 pps
IFM
1A
Forward continuous current
IF
60
mA
Power dissipation
Pdiss
90
mW
Derate linearly from 25 °C
1.2
mW/°C
OUTPUT
Collector emitter breakdown voltage
BVCEO
30
V
Emitter collector breakdown voltage
BVECO
5V
Collector base breakdown voltage
BVCBO
70
V
ICmax. DC
ICmax. DC
50
mA
ICmax.
t < 1 ms
ICmax.
100
mA
Power dissipation
Pdiss
150
mW
SOIC-8
6.1 mm


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