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AM25P03-60D Datasheet(PDF) 1 Page - Analog Power

Part No. AM25P03-60D
Description  P-Channel 30-V (D-S) MOSFET
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Maker  ANALOGPOWER [Analog Power]
Homepage  http://www.analogpowerinc.com/index.html
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AM25P03-60D
Analog Power
May, 2005 - Rev. A
PRELIMINARY
Publication Order Number:
DS-AM25P03-60_D
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
VDS (V)
rDS(on) m(Ω)ID (A)
59 @ VGS = -4.5V
24
95 @ VGS = -2.5V
19
PRODUCT SUMMARY
-26.5
P-Channel 30-V (D-S) MOSFET
•Low r
DS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature TO-252 Surface Mount Package
Saves Board Space
High power and current handling capability
Extended VGS range (±25) for battery pack
applications
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol Maximum Units
VDS
-26.5
VGS
±12
Continuous Drain Current
a
TA=25
oC ID
24
IDM
±40
IS
-30
A
Power Dissipation
a
TA=25
oC PD
50
W
TJ, Tstg -55 to 175
oC
Operating Junction and Storage Temperature Range
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC UNLESS OTHERWISE NOTED)
Parameter
Pulsed Drain Current
b
V
Gate-Source Voltage
Drain-Source Voltage
A
Parameter
Symbol
Maximum
Units
Maximum Junction-to-Ambient
a
RθJA
50
oC/W
Maximum Junction-to-Case
RθJC
3.0
oC/W
THERMAL RESISTANCE RATINGS




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