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AM30N06-39IE Datasheet(PDF) 1 Page - Analog Power |
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AM30N06-39IE Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page 1 AM30N06-39IE Analog Power PRELIMINARY Publication Order Number: DS-AM30N06-39IE_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) rDS(on) m(Ω)ID (A) 38 @ VGS = 10V 30 50 @ VGS = 4.5V 26 PRODUCT SUMMARY 60 N-Channel 60-V (D-S) MOSFET •Low r DS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe DPAK saves board space • Fast switching speed • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol Limit Units VDS 60 VGS ±20 Continuous Drain Current a TC=25 oC ID 19 IDM 40 IS 30 A Power Dissipation a TC=25 oC PD 50 W TJ, Tstg -55 to 175 oC Operating Junction and Storage Temperature Range Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage A Parameter Symbol Maximum Units Maximum Junction-to-Ambient a RθJA 50 oC/W Maximum Junction-to-Case RθJC 3.0 oC/W THERMAL RESISTANCE RATINGS |
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