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EGF1D Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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EGF1D Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page EGF1A-EGF1D, Rev. B EGF1A - EGF1D 1.0 Ampere High Efficiency Glass Passivated Rectifier Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics T A = 25°C unless otherwise noted 1998 Fairchild Semiconductor Corporation Features • Low forward voltage drop. • Low profile package. • Fast switching for high efficiency. Symbol Parameter Value Units IO Average Rectified Current @ TL = 100 °C 1.0 A if(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 30 A PD Total Device Dissipation Derate above 25 °C 2.0 13 W mW/ °C RθJA Thermal Resistance, Junction to Ambient ** 85 °C/W RθJC Thermal Resistance, Junction to Case ** 30 °C/W Tstg Storage Temperature Range -65 to +175 °C TJ Operating Junction Temperature -65 to +175 °C SMA/DO-214AC COLOR BAND DENOTES CATHODE Parameter Device Units 1A 1B 1C 1D Peak Repetitive Reverse Voltage 50 100 150 200 V Maximum RMS Voltage 35 70 105 140 V DC Reverse Voltage (Rated VR) 50 100 150 200 V Maximum Reverse Current @ rated VR TA = 25 °C TA = 125 °C 10 100 µA µA Maximum Forward Voltage @ 1.0 A 1.0 V Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A 50 ns Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 15 pF 2 1 0.208 (5.283) 0.188 (4.775) 0.181 (4.597) 0.157 (3.988) 0.096 (2.438) 0.078 (1.981) 0.062 (1.575) 0.055 (1.397) 0.008 (0.203) 0.002 (0.051) 0.012 (0.305) 0.006 (0.152) 0.060 (1.524) 0.030 (0.762) 0.114 (2.896) 0.098 (2.489) + 3.93 3.73 1.67 1.47 2.38 2.18 5.49 5.29 Minimum Recomm ended Land Pattern |
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