SM-8 DUAL NPN MEDIUM POWER

HIGH GAIN TRANSISTORS

ISSUE 1 - NOVEMBER 1995

PARTMARKING DETAIL – T694

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

120

V

Collector-Emitter Voltage

120

V

Emitter-Base Voltage

5V

Peak Pulse Current

1A

Continuous Collector Current

0.5

A

Operating and Storage Temperature Range

-55 to +150

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

VALUE

UNIT

Any single die “on”

Both die “on” equally

2.25

2.75

W

W

Derate above 25°C*

Any single die “on”

Both die “on” equally

18

22

mW/ °C

mW/ °C

Thermal Resistance - Junction to Ambient*

Any single die “on”

Both die “on” equally

55.6

45.5

°C/ W

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

SM-8

(8 LEAD SOT223)

3 - 343

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

120

V

Collector-Emitter

Breakdown Voltage

120

V

Emitter-Base Breakdown

Voltage

5V

Collector Cutoff Current

0.1

µ

A

Emitter Cutoff Current

0.1

µ

A

Collector-Emitter Saturation

Voltage

0.25

0.5

V

V

Base-Emitter

Saturation Voltage

0.9

V

Base-Emitter

Turn-On Voltage

0.9

V

Static Forward Current

Transfer Ratio

500

400

150

Transition Frequency

130

MHz

f=50MHz

Input Capacitance

200

pF

Output Capacitance

9pF

Switching Times

80

2900

ns

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ZDT694

ZDT694

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