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ZVP4424ASTOA Datasheet(PDF) 1 Page - Diodes Incorporated |
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ZVP4424ASTOA Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 3 page  P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPTEMBER 94 FEATURES * 240 Volt VDS *RDS(on)=9Ω * Low threshold APPLICATIONS * Electronic Hook Switch REFER TO ZVP4424A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -240 V Continuous Drain Current at Tamb=25°C ID -200 mA Pulsed Drain Current IDM -1 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb=25°C Ptot 750 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -240 V ID=-1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) -0.7 -1.4 -2.0 V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 100 nA VGS=± 40V, VDS=0V Zero Gate Voltage Drain Current IDSS -10 -100 µ A µ A VDS=-240 V, VGS=0 VDS=-190V, VGS=0V, T=125°C On-State Drain Current ID(on) -0.75 -1.0 A VDS=-10 V, VGS=-10V Static Drain-Source On-State Resistance RDS(on) 7.1 8.8 9 11 Ω Ω VGS=-10V,ID=-200mA VGS=-3.5V,ID=-100mA Forward Transconductance (1) (2) gfs 125 mS VDS=-10V,ID=-0.2A Input Capacitance (2) Ciss 100 200 pF VDS=-25V, VGS=0V, f=1MHz Common Source Output Capacitance (2) Coss 18 25 pF Reverse Transfer Capacitance (2) Crss 515 pF Turn-On Delay Time (2)(3) td(on) 815 ns VDD≈−50V, ID=-0.25A, VGEN=-10V Rise Time (2)(3) tr 815 ns Turn-Off Delay Time (2)(3) td(off) 26 40 ns Fall Time (2)(3) tf 20 30 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator E-Line TO92 Compatible 3-439 ZVP4424C 3-436 G D S P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPTEMBER 94 FEATURES * 240 Volt VDS *RDS(on)=9Ω * Low threshold APPLICATIONS * Electronic Hook Switch ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -240 V Continuous Drain Current at Tamb=25°C ID -200 mA Pulsed Drain Current IDM -1 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb=25°C Ptot 750 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS -240 V ID=-1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) -0.7 -1.4 -2.0 V ID=-1mA, VDS= VGS Gate-Body Leakage IGSS 100 nA VGS=± 40V, VDS=0V Zero Gate Voltage Drain Current IDSS -10 -100 µ A µ A VDS=-240 V, VGS=0 VDS=-190V, VGS=0V, T=125°C On-State Drain Current ID(on) -0.75 -1.0 A VDS=-10 V, VGS=-10V Static Drain-Source On-State Resistance RDS(on) 7.1 8.8 9 11 Ω Ω VGS=-10V,ID=-200mA VGS=-3.5V,ID=-100mA Forward Transconductance (1) (2) gfs 125 mS VDS=-10V,ID=-0.2A Input Capacitance (2) Ciss 100 200 pF VDS=-25V, VGS=0V, f=1MHz Common Source Output Capacitance (2) Coss 18 25 pF Reverse Transfer Capacitance (2) Crss 515 pF Turn-On Delay Time (2)(3) td(on) 815 ns VDD≈−50V, ID=-0.25A, VGEN=-10V Rise Time (2)(3) tr 815 ns Turn-Off Delay Time (2)(3) td(off) 26 40 ns Fall Time (2)(3) tf 20 30 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator E-Line TO92 Compatible ZVP4424A D G S |
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