©2003 Fairchild Semiconductor Corporation

April 2003

FDB3632 / FDP3632 / FDI3632 Rev. B1

FDB3632 / FDP3632 / FDI3632

100V, 80A, 9m

Ω

Features

• Low Miller Charge

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82784

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

• Electronic Valve Train Systems

Thermal Characteristics

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

100

V

Gate to Source Voltage

±20

V

Drain Current

80

A

12

A

Pulsed

Figure 4

A

Single Pulse Avalanche Energy (Note 1)

393

mJ

Power dissipation

310

W

Operating and Storage Temperature

-55 to 175

Thermal Resistance Junction to Case TO-220, TO-263, TO-262

0.48

Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)

62

43

S

G

D

TO-263AB

FDB SERIES

TO-220AB

FDP SERIES

DRAIN

DRAIN

GATE

GATE

SOURCE

SOURCE

(FLANGE)

DRAIN

(FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

TO-262AB

FDI SERIES