BC856BWT1G datasheet(4/6 Pages) ONSEMI

Part #	BC856BWT1G

Description	General Purpose Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1

Series

http://onsemi.com

4

BC856/SBC856

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

-0.8

-1.0

-0.6

-0.2

-0.4

1.0

2.0

-0.1

-1.0

-10

-200

-0.2

0.2

0.5

-0.2

-1.0

-10

-200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = -5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-1.0

-1.2

-1.6

-2.0

-0.02

-1.0

-10

0

-20

-0.1

-0.4

-0.8

-0.2

-2.0

-10

-200

-1.0

TJ = 25°C

IC =

-10 mA

VCE = -5.0 V

TA = 25°C

0

-0.5

-2.0

-5.0

-20

-50

-100

-0.05

-0.2

-0.5

-2.0

-5.0

-100 mA

-20 mA

-1.4

-1.8

-2.2

-2.6

-3.0

-0.5

-5.0

-20

-50

-100

-55

°C to 125°C

qVB for VBE

-2.0 -5.0

-20

-50 -100

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40

Figure 12. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

-0.1 -0.2

-1.0

-50

2.0

-2.0

-10

-100

100

200

500

50

20

10

6.0

4.0

-1.0

-10

-100

VCE = -5.0 V

-0.5

-5.0

-20

TJ = 25°C

Cob

Cib

8.0

-50 mA

-200 mA

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