FDC6306P Rev. C

FDC6306P

Dual P-Channel 2.5V Specified PowerTrench

™ MOSFET

February 1999

©1999 Fairchild Semiconductor Corporation

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8V

Drain Current

- Continuous

(Note 1a)

-1.9

A

- Pulsed

-5

Power Dissipation for Single Operation

(Note 1a)

0.96

W

(Note 1b)

0.9

(Note 1c)

0.7

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

130

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

60

°C/W

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDC6306P

7’’

8mm

3000 units

5

6

4

2

3

1

General Description

These P-Channel 2.5V specified MOSFETs are produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain low gate charge for

superior switching performance.

These devices have been designed to offer exceptional

power dissipation in a very small footprint for applications

where the bigger more expensive SO-8 and TSSOP-8

packages are impractical.

Applications

Features

DS(on)

= 0.170

Ω @ V

GS

= -4.5 V

R

DS(on)

= 0.250

Ω @ V

GS

= -2.5 V

low R

than standard SO-8); low profile (1mm thick).

D1

S2

G1

D2

S1

G2

SuperSOT

-6

TM