2N7002BKS

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 2 — 23 September 2010

7 of 16

NXP Semiconductors

2N7002BKS

60 V, 300 mA dual N-channel Trench MOSFET

(1) minimum values

(2) typical values

(3) maximum values

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical

values

Fig 7.

Sub-threshold drain current as a function of

gate-source voltage

Fig 8.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

0.0

4.0

3.0

1.0

2.0

017aaa039

0.4

0.5

0.3

0.2

0.1

0.6

0.7

(A)

0.0

3.5 V

3.0 V

2.75 V

2.5 V

3.25 V

017aaa040

0.0

3.0

2.0

1.0

(A)

(2)

(1)

(3)

0.0

1.0

0.8

0.4

0.6

0.2

017aaa041

2.0

4.0

6.0

(

Ω)

0.0

(1)

(2)

(3)

(4)

(5)

0.0

10.0

8.0

4.0

6.0

2.0

017aaa042

2.0

4.0

6.0

(

Ω)

0.0

(1)

(2)