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TO-247AD Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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TO-247AD Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
2 / 12 page www.irf.com © 2012 International Rectifier January 8, 2013 2 IRGP4660DPbF/IRGP4660D-EPbF Notes: VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Pulse width limited by max. junction temperature. Ris measured at TJ of approximately 90°C. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter BreakdownVoltage 600 — — V VGE = 0V, IC = 150μA d V(BR)CES/T J T emperatureCoeff. of BreakdownVoltage —0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) — 1.60 1.90 IC = 48A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Saturation Voltage — 1.90 — V IC = 48A, VGE = 15V, TJ = 150°C —2.00 — IC = 48A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.4mA VGE(th)/T J Threshold Voltage temp. coefficient — -21 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) gfe Forward Transconductance — 32 — S VCE = 50V, IC = 48A, PW = 80μs ICES Collector-to-Emitter Leakage Current — 1.0 150 μAVGE = 0V, VCE = 600V — 450 1000 VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 1.95 2.91 V IF = 48A —1.45 — IF = 48A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 95 140 IC = 48A Qge Gate-to-Emitter Charge (turn-on) — 28 42 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 35 53 VCC = 400V Eon Turn-On Switching Loss — 625 1141 IC = 48A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 1275 1481 μJRG = 10 , L = 200μH, LS = 150nH, TJ = 25°C Etotal Total Switching Loss — 1900 2622 E nergy los s es includetail & diode revers erecovery td(on) Turn-On delay time — 60 78 IC = 48A, VCC = 400V, VGE = 15V tr Rise time — 4056ns RG = 10 , L = 200μH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 145 176 tf Fall time — 35 46 Eon Turn-On Switching Loss — 1625 — IC = 48A, VCC = 400V, VGE=15V Eoff Turn-Off Switching Loss — 1585 — μJRG=10 , L=200μH, LS=150nH, TJ = 175°C Etotal Total Switching Loss — 3210 — E nergy los s es includetail & diode revers erecovery td(on) Turn-On delay time — 55 — IC = 48A, VCC = 400V, VGE = 15V tr Rise time — 45 — ns RG = 10 , L = 200μH, LS = 150nH td(off) Turn-Off delay time — 165 — TJ = 175°C tf Fall time — 45 — Cies Input Capacitance — 3025 — pF VGE = 0V Coes Output Capacitance — 245 — VCC = 30V Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz TJ = 175°C, IC = 192A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V Rg = 10 , VGE = +15V to 0V SCSOA Short Circuit Safe Operating Area 5 — — μsVCC = 400V, Vp =600V Rg = 10 , VGE = +15V to 0V Erec Reverse Recovery Energy of the Diode — 845 — μJTJ = 175°C trr Diode Reverse Recovery Time — 115 — ns VCC = 400V, IF = 48A Irr Peak Reverse Recovery Current — 40 — A VGE = 15V, Rg = 10, L =200μH, Ls = 150nH Conditions |
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