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VS-EPH3006-N3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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VS-EPH3006-N3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 11 page New Product VS-APH3006-F3, VS-APH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3 www.vishay.com Vishay Semiconductors Revision: 05-Apr-12 4 Document Number: 93571 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Typical Reverse Recovery vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt Average Forward Current - I F(AV) (A) 0 10 20 30 40 50 80 90 100 110 120 130 140 150 160 170 180 DC Average Forward Current - I F(AV) (A) 0 5 10 15 20 25 30 35 40 45 0 20 40 60 80 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC RMS Limit I F = 30 A, 125 °C I F = 30 A, 25 °C typical value dI F/dt (A/μs) 10 20 30 40 50 60 70 80 90 100 1000 I F = 30 A, 125 °C I F = 30 A, 25 °C typical value dI F/dt (A/μs) 10 0 200 300 400 500 600 700 800 900 100 1000 |
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