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2N3904BU Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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2N3904BU Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3904 / MMBT3904 / PZT3904 Rev. B0 3 Typical Performance Characteristics Base-Emitter ON Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C V = 5V CE 25 °C 125 °C - 40 °C Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C β = 10 25 °C 125 °C - 40 °C Collector-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.05 0.1 0.15 I - COLLECTOR CURRENT (mA) 25 °C C β = 10 125 °C - 40 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 1 10 100 500 T - AMBIENT TEMPERATURE ( C) A V = 30V CB ° Capacitance vs Reverse Bias Voltage 0.1 1 10 100 1 2 3 4 5 10 REVERSE BIAS VOLTAGE (V) C obo C ibo f = 1.0 MHz Typical Pulsed Current Gain vs Collector Current 0.1 1 10 100 0 100 200 300 400 500 I - COLLECTOR CURRENT (mA) - 40 °C 25 °C C V = 5V CE 125 °C β β |
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