April 2010

©2010 Fairchild Semiconductor Corporation

FDMS86201 Rev.C

www.fairchildsemi.com

1

Preliminary Datasheet

FDMS86201

120 V, 35 A, 11.5 m

:

Features

and high efficiency

„ MSL1 robust package design

„ 100% UIL tested

„ RoHS Compliant

General Description

This

N-Channel

MOSFET

is

produced using Fairchild

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Application

„ DC-DC Conversion

Power 56

D

D

D

D

G

S

S

S

Pin 1

Bottom

Top

G

S

S

S

D

D

D

D

5

6

7

8

3

2

1

4

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

120

V

Gate to Source Voltage

±20

V

Drain Current -Continuous (Package limited)

35

A

-Continuous (Silicon limited)

65

-Continuous

(Note 1a)

11.6

-Pulsed

160

Single Pulse Avalanche Energy

(Note 3)

264

mJ

Power Dissipation

104

W

Power Dissipation

(Note 1a)

2.5

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

1.2

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMS86201

FDMS86201

Power 56

13 ’’

12 mm

3000 units