1;3 Semiconductors

Product specification

Triacs

BT134 series D

logic level

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated,

sensitive

gate

SYMBOL

PARAMETER

MAX.

MAX. UNIT

triacs in a plastic envelope, intended

for

use

in

general

purpose

BT134-

500D

600D

bidirectional switching and phase

V

DRM

Repetitive peak off-state voltages

500

600

V

control applications. These devices

I

T(RMS)

RMS on-state current

4

4

A

are intended to be interfaced directly

I

TSM

Non-repetitive peak on-state current

25

25

A

to microcontrollers, logic integrated

circuits and other low power gate

trigger circuits.

PINNING - SOT82

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

main terminal 1

2

main terminal 2

3

gate

tab

main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

V

DRM

Repetitive peak off-state

-

500

1

600

1

V

voltages

I

T(RMS)

RMS on-state current

full sine wave; T

mb

≤ 107 ˚C

-

4

A

I

TSM

Non-repetitive peak

full sine wave; T

on-state current

surge

t = 20 ms

-

25

A

t = 16.7 ms

-

27

A

I

t = 10 ms

-

3.1

A

dI

Repetitive rate of rise of

I

on-state current after

dI

μs

triggering

T2+ G+

-

50

A/

μs

T2+ G-

-

50

A/

μs

T2- G-

-

50

A/

μs

T2- G+

-

10

A/

μs

I

GM

Peak gate current

-

2

A

V

GM

Peak gate voltage

-

5

V

P

GM

Peak gate power

-

5

W

P

G(AV)

Average gate power

over any 20 ms period

-

0.5

W

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction

-

125

˚C

temperature

T1

T2

G

1

23

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 3 A/

μs.

October 1997

1

Rev 1.200