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UCC27424DR Datasheet(PDF) 9 Page - Texas Instruments |
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UCC27424DR Datasheet(HTML) 9 Page - Texas Instruments |
9 / 30 page E + 1 2 CV2 UCC27423, UCC27424, UCC27425 www.ti.com SLUS545D – NOVEMBER 2002 – REVISED MAY 2013 Figure 6. In a power driver operating at high frequency, it is a significant challenge to get clean waveforms without much overshoot/undershoot and ringing. The low output impedance of these drivers produces waveforms with high di/dt. This tends to induce ringing in the parasitic inductances. Utmost care must be used in the circuit layout. It is advantageous to connect the driver IC as close as possible to the leads. The driver IC layout has ground on the opposite side of the output, so the ground should be connected to the bypass capacitors and the load with copper trace as wide as possible. These connections should also be made with a small enclosed loop area to minimize the inductance. VDD Although quiescent VDD current is very low, total supply current will be higher, depending on OUTA and OUTB current and the programmed oscillator frequency. Total VDD current is the sum of quiescent VDD current and the average OUT current. Knowing the operating frequency and the MOSFET gate charge (Qg), average OUT current can be calculated from: IOUT = Qg × f, where f is frequency For the best high-speed circuit performance, two VDD bypass capacitors are recommended tp prevent noise problems. The use of surface mount components is highly recommended. A 0.1 μF ceramic capacitor should be located closest to the VDD to ground connection. In addition, a larger capacitor (such as 1 μF) with relatively low ESR should be connected in parallel, to help deliver the high current peaks to the load. The parallel combination of capacitors should present a low impedance characteristic for the expected current levels in the driver application. Drive Current and Power Requirements The UCC27423/4/5 family of drivers are capable of delivering 4A of current to a MOSFET gate for a period of several hundred nanoseconds. High peak current is required to turn the device ON quickly. Then, to turn the device OFF, the driver is required to sink a similar amount of current to ground. This repeats at the operating frequency of the power device. A MOSFET is used in this discussion because it is the most common type of switching device used in high frequency power conversion equipment. References 1 and 2 discuss the current required to drive a power MOSFET and other capacitive-input switching devices. Reference 2 includes information on the previous generation of bipolar IC gate drivers. When a driver IC is tested with a discrete, capacitive load it is a fairly simple matter to calculate the power that is required from the bias supply. The energy that must be transferred from the bias supply to charge the capacitor is given by: , where C is the load capacitor and V is the bias voltage feeding the driver. Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Links: UCC27423 UCC27424 UCC27425 |
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