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UCC27424DGNRG4 Datasheet(PDF) 3 Page - Texas Instruments |
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UCC27424DGNRG4 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 30 page UCC27423, UCC27424, UCC27425 www.ti.com SLUS545D – NOVEMBER 2002 – REVISED MAY 2013 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) VALUE UNIT VDD Supply voltage -0.3 to 16 V IOUT_DC Output current (OUTA, OUTB) DC 0.2 A IOUT_PULSED Pulsed, (0.5 μs) 4.5 A VIN Input voltage (INA, INB) -5 to 6 or VDD+0.3 (whichever is larger) V Enable voltage (ENBA, ENBB) –0.3 V to 6 V or VDD+0.3 (whichever is larger) DGN package 3 W Power dissipation at TA = 25°C D package 650 mW P package 350 TJ Junction operating temperature –55 to 150 Tstg Storage temperature –65 to 150 °C Lead temperature (soldering, 10 sec) 300 (1) When VDD ≤ 6 V, EN rating max value is 6 V; when VDD > 6 V, EN rating max value is VDD + 0.3 V. ELECTRICAL CHARACTERISTICS VDD = 4.5V to 15V, TA = –40°C to 125°C ,TA = TJ, (unless otherwise noted) PARAMETER TEST CONDITION MIN TYP MAX UNIT INPUT (INA, INB) VIN_H Logic 1 input threshold 2 V VIN_L Logic 0 input threshold 1 Input current 0 V ≤ VIN ≤ VDD –10 0 10 μA OUTPUT (OUTA, OUTB) Output current VDD = 14 V (1) 4 A VOH High-level output voltage VOH = VDD – VOUT, IOUT = –10 mA 330 450 mV VOL Low-level output level IOUT = 10 mA 22 45 TA = 25°C, IOUT = –10 mA, VDD = 14 V (2) 25 30 35 Output resistance high TA = full range, IOUT = –10 mA, VDD = 14 V (2) 18 45 Ω TA = 25°C, IOUT = 10 mA, VDD = 14 V (2) 1.9 2.2 2.5 Output resistance low TA = full range IOUT = 10 mA, VDD = 14 V (2) 1.2 4.0 Latch-up protection 500 mA SWITCHING TIME tr Rise time (OUTA, OUTB) CLOAD = 1.8 nF 20 40 tf Fall time (OUTA, OUTB) CLOAD = 1.8 nF 15 40 ns td1 Delay, IN rising (IN to OUT) CLOAD = 1.8 nF 25 40 td2 Delay, IN falling (IN to OUT) CLOAD = 1.8 nF 35 50 (1) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the combined current from the bipolar and MOSFET transistors. (2) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the Rds(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor. Copyright © 2002–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: UCC27423 UCC27424 UCC27425 |
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