UCC27323

GND

1

2

3

4

INB

INA

7

6

5

8

OUTA

VDD

OUTB

1 μF

CER

100 μF

AL EL

DSCHOTTKY

VDD

C2

1 μF

VSNS

RSNS

0.1

Ω

C3

100 μF

10

Ω

ENBA

ENBB

4.5 V

Signal

Generator

250 ns

UCC27323, UCC27324, UCC27325

UCC37323, UCC37324, UCC37325

SLUS492H – JUNE 2001 – REVISED MAY 2013

www.ti.com

Figure 3.

Note that the current sink capability is slightly stronger than the current source capability at lower VDD. This

stronger capability is due to the differences in the structure of the bipolar-MOSFET power output section, where

the current source is a P-channel MOSFET and the current sink has an N-channel MOSFET.

In a large majority of applications it is advantageous that the turn-off capability of a driver is stronger than the

turn-on capability. This helps to ensure that the MOSFET is held OFF during common power supply transients

which may turn the device back ON.

8

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