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SI8467DB Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI8467DB Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number: 65930 S10-0643-Rev. A, 22-Mar-10 Vishay Siliconix Si8467DB TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.04 0.08 0.12 0.16 0.20 0 1 234 5 TJ =25 °C ID =1.5 A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 5 10 15 20 25 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms 10 s, DC VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified 100 ms, 1 s |
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