© Semiconductor Components Industries, LLC, 2013

February, 2013 − Rev. 4

1

Publication Order Number:

NDF11N50Z/D

NDF11N50Z

N-Channel Power MOSFET

500 V, 0.52 W

Features

Compliant

Rating

Symbol

NDF

Unit

Drain−to−Source Voltage

500

V

12

A

Continuous Drain Current

7.4

A

Pulsed Drain Current,

44

A

39

W

Gate−to−Source Voltage

±30

V

Single Pulse Avalanche

420

mJ

ESD (HBM) (JESD22−A114)

4000

V

RMS Isolation Voltage

(t = 0.3 sec., R.H. ≤ 30%,

4500

V

Peak Diode Recovery (Note 2)

dv/dt

4.5

V/ns

Continuous Source Current (Body

Diode)

12

A

Maximum Temperature for

Soldering Leads

260

°C

Operating Junction and

Storage Temperature Range

−55 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Limited by maximum junction temperature

N−Channel

MARKING

DIAGRAM

A

= Location Code

Y

= Year

WW

= Work Week

G, H

= Pb−Free, Halogen−Free Package

http://onsemi.com

500 V

0.52 W

NDF11N50ZG

or

NDF11N50ZH

AYWW

Gate

Source

Drain

NDF11N50ZG

TO−220FP

CASE 221D

NDF11N50ZH

TO−220FP

CASE 221AH

G (1)

D (2)

S (3)

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION